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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3404-Z-E2-AZ is a single N-channel enhancement mode power MOSFET manufactured by Renesas Electronics Corporation. It features a TO-263ABVAR (MP-25Z) surface-mount package with three leads and dimensions of 10 x 8 x 4.8 mm. The device supports a maximum drain current of 82 A and a breakdown voltage of 60 V. Key electrical characteristics include a maximum on-resistance of 14 mΩ at 10 V gate drive and 21 mΩ at 4.5 V. Total gate charge is typically 25 nC, with a maximum power dissipation of 95 W and an operating temperature range up to 150 °C.
Feature Summary
- N-channel enhancement mode construction for switching applications
- Low on-resistance optimized for high-efficiency power conversion
- Surface-mount MP-25Z package design for compact integration
Applications
- Industrial power systems
- Consumer electronic devices
- General-purpose switching circuits
Procurement Notes
Verify the complete part number including suffixes such as -E2-AZ to ensure correct packaging and compliance specifications. Confirm RoHS status and lead-free requirements against project constraints. Cross-reference the manufacturer datasheet for exact thermal resistance values and mounting guidelines. Ensure compatibility with existing PCB footprints and reflow soldering profiles specified by Renesas.
Selection Notes
Select this component for designs requiring high current handling in a 60 V environment. Evaluate thermal management capabilities based on the 95 W dissipation rating and package type. Consider gate charge characteristics for driving efficiency in high-frequency switching scenarios. Verify that the required gate drive voltage aligns with the low RDS(on) performance thresholds provided in the electrical specifications.
Part Context
This device belongs to Renesas' single FET portfolio, specifically designed as a switching power MOSFET. It utilizes advanced silicon technology to achieve low conduction losses while maintaining robust avalanche ruggedness. The MP-25Z package offers improved thermal performance compared to traditional TO-263 variants, supporting modern high-density power electronics layouts.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Evaluate alternative Renesas N-channel MOSFETs with similar 60 V ratings and comparable pinout configurations. Verify package compatibility and thermal characteristics before substitution.
