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Product Detailed Parameters
- Description：MOSFET N-CH 40V 80A TO220AB
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 84W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The 2SK3430-Z-E1-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation, designed for industrial use. It features a TO-220SMD package and includes a built-in gate protection diode. Key electrical parameters include a drain-to-source voltage of 60 V, a maximum continuous drain current of 40 A, and a super low on-state resistance of 7.3 mΩ maximum at VGS = 10 V and ID = 40 A. The device also exhibits a typical input capacitance of 2800 pF.
Feature Summary
- Super low on-state resistance for high efficiency
- Built-in gate protection diode
- Low input capacitance
Applications
- High current switching applications in industrial equipment
Procurement Notes
Verify the specific suffix -E1-AZ against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with industrial temperature ranges and confirm RoHS compliance status through the manufacturer's latest datasheet before procurement.
Selection Notes
Select this component for designs requiring robust N-channel switching with integrated gate protection. Consider the 60 V rating and 40 A current capacity when sizing thermal management solutions. Verify that the TO-220SMD package fits the PCB layout constraints and that the low RDS(on) meets efficiency targets.
Part Context
This part belongs to the 2SK3430 series of N-channel power MOSFETs from Renesas (formerly NEC). The series is engineered for industrial applications demanding high current handling and reliability. The Z-E1-AZ designation indicates specific ordering and packaging variations within this product line.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic replacements may not match the built-in gate protection diode or specific RDS(on) characteristics.
