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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3432-Z-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 83 A at 25°C. The device is housed in a TO-251 package with short leads, also known as IPAK or TO-251AA. It supports gate drive voltages of 4.5 V and 10 V for optimal Rds(on) performance.
Feature Summary
- N-channel power MOSFET construction
- High current handling capability up to 83 A
- Low voltage rating suitable for specific power stages
- Through-hole mounting via TO-251 package
Applications
- Industrial motor control systems
- Consumer electronics power management
- General-purpose switching applications
Procurement Notes
Verify the exact part number suffix against official Renesas documentation to confirm pinout and electrical specifications. Confirm RoHS compliance status and lead-free certification requirements for your assembly process. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for through-hole implementations. Ensure the application voltage remains below 40 V and current demands do not exceed 83 A without adequate thermal management. Compare thermal resistance values against your heatsinking strategy to ensure reliable operation under load.
Part Context
This component belongs to Renesas' discrete semiconductor portfolio, specifically within the single FET and MOSFET categories. It is designed for robust power switching tasks where moderate voltage isolation and high current capacity are necessary. The TO-251 package offers a balance between thermal performance and mechanical stability for industrial and consumer environments.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2SK3432-Z-AZ were not identified in the provided source material. Verify compatibility with any potential replacements by cross-referencing datasheets for matching Vdss, Id, and package dimensions.
