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Product Detailed Parameters
- Description：2SK3455B - SWITCHING N-CHANNEL P
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 50W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220 (MP-45F)
- Package / Case：TO-220-3 Full Pack
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Overview
The 2SK3455B-S17-AY is an N-channel MOSFET from Renesas Electronics, housed in an isolated TO-220 package. It supports a drain-source voltage of 500 V and a continuous drain current of 12 A at case temperature. The device features a maximum gate threshold voltage of 3.5 V at 1 mA and a maximum gate-source voltage of ±30 V. Power dissipation ratings are 2 W at ambient temperature and 50 W at case temperature. Input capacitance is specified as 1800 pF at 10 V, with an operating junction temperature up to 150°C.
Feature Summary
- Isolated TO-220 package design for enhanced thermal management and electrical isolation
- High-voltage capability rated at 500 V for robust switching applications
- Low gate threshold voltage of 3.5 V facilitating efficient drive requirements
Applications
- Isolated power supply circuits
- High-voltage switching modules
- Industrial motor control systems
Procurement Notes
Verify the specific suffix S17-AY against official Renesas documentation to confirm the isolated TO-220 package configuration. Ensure compatibility with required thermal dissipation standards for both ambient and case conditions. Cross-reference datasheet parameters such as Vgs(th) and power ratings to validate suitability for the target circuit design before procurement.
Selection Notes
Select this component when high voltage isolation and moderate current handling are required in a through-hole format. The isolated package distinguishes it from standard TO-220 variants. Consider the 12 A current limit and 500 V rating against peak load demands. Verify that the 3.5 V threshold aligns with available gate drive voltages for optimal switching performance.
Part Context
This part belongs to Renesas' single FET and MOSFET product line. It is specifically categorized as an N-channel switching device. The model number indicates a specific variant within the 2SK3455 series, distinguished by its packaging and isolation characteristics provided by the manufacturer.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas documentation or authorized distributors for verified equivalents.
