2SK3462(TE16L1,NQ)

Description：MOSFET N-CH 250V 3A PW-MOLD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:3fe7cb61c37b Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 3A PW-MOLD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：267 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：20W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PW-MOLD
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK3462(TE16L1,NQ)

Overview

The Toshiba Semiconductor and Storage 2SK3462(TE16L1,NQ) is a silicon N-channel MOS type field effect transistor utilizing π-MOSV technology. It features a drain-source voltage rating of 250 V and a continuous DC drain current of 3 A. The device exhibits a typical drain-source ON-resistance of 1.2 Ω at VGS = 10 V and ID = 1.5 A, with a maximum of 1.7 Ω. It supports a 4 V gate drive and has a typical forward transfer admittance of 2.2 S. The component operates within a channel temperature range up to 150 °C and includes an internal body diode with a reverse recovery time of 125 ns.

Feature Summary

Utilizes π-MOSV technology for enhanced switching performance
Supports low-voltage 4 V gate drive operation
Features high forward transfer admittance for efficient signal control
Includes integrated body diode with defined reverse recovery characteristics

Applications

Switching regulator circuits
DC/DC converter designs
Motor drive applications

Procurement Notes

Verify the specific ordering suffix TE16L1,NQ against official Toshiba documentation to confirm packaging and environmental compliance details. Ensure that the selected variant matches the required thermal resistance and package dimensions for your PCB layout. Cross-reference the datasheet revision date to confirm the accuracy of electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a 250 V breakdown voltage and moderate current handling up to 3 A. Consider the 1.2 Ω typical ON-resistance for power loss calculations in switching regulators. Verify that the 4 V gate drive capability aligns with your controller's output levels. Evaluate the thermal management requirements based on the 6.25 °C/W thermal resistance from channel to case.

Part Context

This part belongs to the 2SK3462 series of N-channel MOSFETs designed by Toshiba Semiconductor and Storage. It is engineered for general electronics applications such as computers, office equipment, and industrial robots. The device is distinct from automotive-grade parts like the TK33S10N1L, focusing instead on standard switching performance without explicit automotive qualification markings in the provided text.