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Product Detailed Parameters
- Description：MOSFET N-CH 500V 5A 4TFP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：780 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-TFP (9.2x9.2)
- Package / Case：SC-97
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Overview
The Toshiba Semiconductor and Storage 2SK3466(TE24L,Q) is a Silicon N-Channel MOS Field Effect Transistor utilizing π-MOSV technology. It features a drain-source voltage rating of 500 V, a continuous DC drain current of 5 A, and a power dissipation capacity of 50 W at 25°C case temperature. The device exhibits a typical drain-source ON-resistance of 1.35 Ω and a forward transfer admittance of 4.0 S. Key electrical parameters include a gate threshold voltage range of 2.0 to 4.0 V, a maximum gate leakage current of ±10 µA, and a total gate charge of 17 nC.
Feature Summary
- Utilizes π-MOSV silicon N-channel technology for enhanced performance
- Provides low drain-source ON-resistance for efficient conduction
- Features high forward transfer admittance for effective signal control
- Designed with low leakage current characteristics
Applications
- Chopper regulator applications
- High-voltage switching circuits
- Power management systems requiring robust avalanche energy handling
Procurement Notes
Verify the specific TE24L,Q suffix against official Toshiba documentation to confirm package type and environmental compliance status. Ensure that design parameters remain within absolute maximum ratings, particularly regarding channel temperature limits and thermal resistance derating curves. Consult the manufacturer's reliability handbook for detailed handling precautions and derating methods before finalizing procurement specifications.
Selection Notes
Select this component when designing chopper regulators or high-voltage switching applications requiring a 500 V breakdown voltage and 5 A continuous current capability. Consider the 1.35 Ω typical ON-resistance and 4.0 S forward transfer admittance for efficiency requirements. Evaluate the 180 mJ single pulse avalanche energy rating if inductive load switching is anticipated. Confirm compatibility with the specified TO-220AB package dimensions and thermal management needs.
Part Context
This part belongs to the Toshiba π-MOSV series of N-channel MOSFETs, engineered for high-voltage power switching applications. The 2SK3466 specifically targets chopper regulator designs where low on-resistance and high transconductance are critical. It represents a discrete semiconductor solution distinct from integrated power management ICs, focusing on raw switching performance and ruggedness under high voltage stress conditions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided datasheet. Verify pinout compatibility and thermal characteristics carefully if considering alternative manufacturers' devices with similar 500 V and 5 A ratings.
