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Product Detailed Parameters
- Description：MOSFET N-CH 100V 83A TO-263
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：11mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：210 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：11000 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 125W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263, TO-220SMD
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The Renesas 2SK3479-Z-E1-AZ is a single N-channel power MOSFET designed for demanding switching applications. It features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 83 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.5 mΩ at Vgs = 10 V, ensuring low conduction losses. It is housed in a TO-263 surface-mount package, suitable for high-power density designs.
Feature Summary
- N-channel silicon gate technology for efficient power switching
- Low on-resistance to minimize conduction losses
- Robust avalanche energy capability
- Surface-mount packaging for automated assembly
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the exact suffix against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Ensure the ordering code matches the specific package variant required for your PCB layout. Cross-reference with official Renesas documentation to validate RoHS compliance status and lead times before finalizing procurement plans.
Selection Notes
Select this component when a 100 V rating and high current capacity are required in a surface-mount form factor. Evaluate the thermal resistance parameters relative to your heatsinking strategy. Compare Rds(on) specifications against alternative packages to optimize efficiency and board space constraints for the target power application.
Part Context
This part belongs to Renesas' standard N-channel MOSFET family, often utilized in industrial and automotive power management. The 'Z' designation typically indicates specific internal die or packaging variations within the broader 2SK3479 series. It serves as a discrete solution for medium-voltage power switching tasks.
Replacement Considerations
Check for direct substitutes such as the 2SK3479-Z-E2-AZ, which may share similar electrical characteristics but differ in packaging or minor parameter tolerances. Verify compatibility with existing driver circuits and thermal management solutions before swapping components.
