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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：28A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3483(0)-Z-E1-AY is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a built-in diode and utilizes metal-oxide semiconductor technology. The device is rated for a drain-source voltage of 100V and supports a continuous drain current of 28A at the junction temperature limit. The on-resistance is specified at 52 milliohms. This component is designed for industrial and consumer applications, packaged in a leaded configuration with three terminals.
Feature Summary
- Single N-channel configuration with integrated body diode
- Metal-oxide semiconductor construction for robust switching performance
- High current handling capability suitable for power management tasks
Applications
- Industrial equipment power stages
- Consumer electronics power supplies
- General-purpose switching circuits
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and compliance attributes. Confirm that the discontinued status does not impact long-term supply requirements. Check datasheet revisions for any updates to thermal or electrical characteristics before finalizing design integration.
Selection Notes
Select this component when a 100V rating and 28A current capacity are required in a single package with an integrated diode. Consider the 52 milliohm on-resistance for efficiency calculations. Ensure the application environment aligns with the specified industrial or consumer use cases defined by the manufacturer.
Part Context
This part belongs to Renesas' discrete power MOSFET portfolio. It serves as a standalone switching element rather than an integrated driver or controller. The designation indicates a specific variant within the broader 2SK3483 family, distinguished by its packaging and terminal configuration details provided in official documentation.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official cross-reference guides or contact the manufacturer directly for validated alternatives.
