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The Renesas Electronics 2SK3484(0)-Z-E1-AZ is an N-channel power MOSFET designed for high current switching applications. It features a low on-state resistance of 125 mΩ maximum at VGS = 10 V and ID = 8 A, and 148 mΩ maximum at VGS = 4.5 V and ID = 8 A. The device has a drain-to-source voltage rating of 100 V and a continuous drain current capability of 16 A at TC = 25°C. It includes a built-in gate protection diode and is available in TO-251 or TO-252 packages.
Verify the specific package variant (TO-251 or TO-252) required for your design, as ordering suffixes determine the physical footprint. Confirm that the component meets the intended quality grade (Standard, High Quality, or Specific) for your application environment. Ensure compliance with export control regulations if applicable to your region.
Select this component when designing circuits requiring robust N-channel MOSFET performance with integrated gate protection. Consider the thermal resistance characteristics and derating curves to ensure safe operation within the specified temperature range. Evaluate the switching times and capacitance values against your system's frequency requirements.
This part belongs to the Renesas (formerly NEC Electronics) lineup of discrete semiconductor devices. It is classified as a standard quality grade product intended for general industrial and commercial use. The datasheet provides comprehensive electrical characteristics and thermal data to support circuit design and validation processes.
Check for direct pin-compatible alternatives from the same manufacturer family. Verify that any substitute matches the 100V VDS rating and comparable RDS(on) specifications. Ensure the replacement package type aligns with existing PCB layout constraints.