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Product Detailed Parameters
- Description：NCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3485-TD-E is an N-channel MOSFET from onsemi’s 2.5V Drive Series, designed for low-voltage logic applications. It features a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.5A. The device utilizes a SOT-89 surface-mount package, facilitating compact circuit board layouts. Its primary technical advantage is the optimized gate charge characteristics that enable full enhancement at a gate-source voltage (Vgs) of 2.5V, ensuring compatibility with modern low-power microcontrollers and digital logic interfaces without requiring additional level-shifting drivers.
Feature Summary
- Optimized for direct drive by 2.5V logic signals
- Low on-resistance for efficient power handling
- Compact SOT-89 surface-mount packaging
Applications
- Battery-powered portable devices
- Logic-level switching circuits
- DC-DC converter synchronous rectification
Procurement Notes
Verify the specific datasheet revision and electrical parameter tolerances against your design requirements before finalizing the bill of materials. Confirm that the SOT-89 thermal performance meets your system's heat dissipation needs under maximum load conditions. Ensure supply chain authenticity through authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when system architecture requires driving an N-channel MOSFET directly from a 2.5V logic source. Compare total on-resistance and gate charge metrics against alternative packages if space constraints allow. Consider thermal resistance values if the application involves sustained high-current loads or limited PCB copper area for heat spreading.
Part Context
This part belongs to onsemi’s specialized series of MOSFETs engineered for ultra-low gate drive voltages. It complements higher-voltage counterparts in the same family, offering a balance between current capacity and logic compatibility for consumer electronics and industrial control systems where power efficiency and interface simplicity are critical design factors.
Replacement Considerations
Check for pin-compatible alternatives within the same voltage and current ratings. Verify that substitute parts maintain equivalent gate threshold voltage specifications to ensure reliable switching at 2.5V. Review thermal and mechanical dimensions to confirm fitment in existing footprints.
