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Product Detailed Parameters
- Description：NCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK3491-E is an N-Channel MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and supports a maximum continuous current of 1A. The device exhibits a typical on-resistance of 8.5 ohms, ensuring efficient power handling in compact circuits. With optimized gate charge characteristics, it facilitates straightforward drive requirements while maintaining robust performance under dynamic conditions.
Feature Summary
- N-Channel configuration with 600V drain-source voltage capability
- Low gate charge (Qg) enabling simple drive requirements
- Improved ruggedness through enhanced avalanche and dynamic dV/dt characteristics
Applications
- High-voltage discrete switching circuits
- Power management modules requiring low current handling
- General-purpose solid-state relay replacements
Procurement Notes
Verify the specific suffix 'E' against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Ensure compatibility with your system's thermal management strategy given the 8.5 ohm on-resistance at 1A. Cross-reference the package type with your PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when a 600V rated N-Channel MOSFET is required for low-current applications up to 1A. The 8.5 ohm on-resistance makes it suitable for cost-sensitive designs where moderate conduction losses are acceptable. Prioritize this part if simplified gate drive circuitry is a design constraint due to its low gate charge profile.
Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It serves as a standalone switching element rather than an integrated power module. The 2SK3491 series is engineered for reliability in industrial and consumer electronics environments requiring robust high-voltage performance.
Replacement Considerations
The 2SK3491-TL-E is a related variant within the same family. Verify if the 'TL' suffix indicates a specific tape-and-reel packaging or minor parameter variation compared to the standard 'E' version. Consult the official datasheet to ensure functional equivalence before substitution.
