2SK3547G0L

$0.11

Description：MOSFET N-CH 50V 100MA SSSMINI3
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)

SKU:60fd7a21d58d Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 100MA SSSMINI3
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±7V
Input Capacitance (Ciss) (Max) @ Vds：12 pF @ 3 V
FET Feature：-
Power Dissipation (Max)：100mW (Ta)
Operating Temperature：125°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SSSMini3-F2
Package / Case：SOT-723

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2SK3547G0L

Overview

The Panasonic 2SK3547G0L is a silicon N-channel MOSFET designed for switching applications. It features a 50 V drain-source voltage and a continuous drain current of 100 mA, with a peak rating of 200 mA. The device incorporates a built-in gate-protection diode and operates within a channel temperature range up to 125 °C. Packaged in the SSSMini3-F2 format, it exhibits low forward transfer capacitance (12 pF) and turn-on/off times of approximately 200 ns at 3 V. The component complies with the RoHS Directive.

Feature Summary

High-speed switching capability suitable for wide frequency band applications
Integrated gate-protection diode for enhanced circuit reliability
Compact surface-mount packaging optimized for automated assembly

Applications

General electronic equipment
Office equipment
Communications equipment
Measuring instruments

Procurement Notes

Verify the specific ordering suffix 'G0L' against official documentation to confirm package and marking details. Confirm availability status as the base model may be discontinued or under maintenance. Ensure compliance with export control regulations if applicable. Request the latest Product Standards before final design implementation to verify current specifications.

Selection Notes

Select this component for low-power switching circuits requiring high speed and compact form factors. Evaluate thermal management requirements given the 100 mW power dissipation limit. Verify that the 50 V breakdown voltage and 100 mA current ratings exceed operational peaks. Consider the small signal nature for general-purpose logic or interface tasks rather than high-power loads.

Part Context

This part belongs to the Panasonic Silicon Junction FETs (Small Signal) series. It is categorized under discrete semiconductors intended for standard applications. The device utilizes silicon technology and is manufactured by Panasonic Electronic Components.

Replacement Considerations

Consult official distributor databases for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution.