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Product Detailed Parameters
- Description：JFET N-CH 5V 3CP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：15 V
- Drain to Source Voltage (Vdss)：15 V
- Current - Drain (Idss) @ Vds (Vgs=0)：32 mA @ 5 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 100 µA
- Input Capacitance (Ciss) (Max) @ Vds：10pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：200 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-CP
- Grade：-
- Qualification：-
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Overview
The onsemi 2SK3557-7-TB-E is an N-channel JFET in a CP (SC-59/SOT-23) surface-mount package. It features a drain-to-source voltage of 15 V and a maximum continuous drain current of 50 mA, with power dissipation rated at 200 mW. The device belongs to Rank 7, specifying a drain current (IDSS) range of 16.0 to 32.0 mA at VDS = 5 V and VGS = 0 V. Key electrical characteristics include a forward transfer admittance (|yfs|) of 24 to 35 mS, an input capacitance (Ciss) of 10 pF, and a noise figure of 1.0 dB.
Feature Summary
- Ultralow noise figure suitable for sensitive signal amplification
- Small input capacitance for high-frequency performance
- Large forward transfer admittance for effective gain
- Ultrasmall package size enabling compact circuit designs
Applications
- AM tuner RF amplification
- Low noise amplifier circuits
Procurement Notes
Verify the specific ordering suffix '-7-TB-E' to confirm the IDSS rank classification. Ensure the component matches the required SC-59/CP package dimensions and lead configuration. Confirm RoHS compliance status and check for any specific tape and reel orientation requirements during assembly.
Selection Notes
Select this part when low noise and small form factor are critical. Compare the 16.0 to 32.0 mA IDSS range against circuit biasing needs. Verify that the 15 V breakdown voltage meets system requirements. Consider thermal derating if operating near the 150°C junction temperature limit.
Part Context
This component is part of the 2SK3557 series from onsemi. It is designed specifically for low-noise applications requiring minimal physical footprint. The device utilizes silicon technology and is packaged in a standard SOT-23 compatible outline for automated surface-mount assembly.
Replacement Considerations
Check for direct pin-compatible alternatives within the same series or family. Verify that substitute components match the 15 V rating and 50 mA current limits. Ensure replacement parts offer comparable noise figures and capacitance values to maintain circuit performance.
FAQ
What is the IDSS range for the 2SK3557-7-TB-E?
The 2SK3557-7-TB-E corresponds to Rank 7, which specifies an IDSS range of 16.0 to 32.0 mA at VDS = 5 V and VGS = 0 V.
What is the typical noise figure of this JFET?
The typical noise figure is 1.0 dB, measured at VDS = 5 V, Rg = 1 kΩ, ID = 1 mA, and f = 1 kHz.
What package type does the 2SK3557-7-TB-E use?
It uses the CP package, which is equivalent to SC-59, TO-236, or SOT-23.
