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Product Detailed Parameters
- Description：MOSFET N-CH 900V 3A TO220SIS
- Series：π-MOSIV
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba 2SK3564 is a silicon N-channel MOSFET utilizing π-MOSIV technology, designed for switching regulator applications. It features a drain-source voltage (VDS) of 900 V and a continuous DC drain current (ID) of 3 A at 25°C. The device exhibits a typical drain-source ON-resistance (RDS(ON)) of 3.7 Ω at VGS = 10 V and ID = 1.5 A. Key electrical characteristics include a forward transfer admittance (|Yfs|) of 2.6 S, a gate threshold voltage (Vth) ranging from 2.0 to 4.0 V, and a maximum drain cut-off current (IDSS) of 100 μA at VDS = 720 V. The component supports a single pulse avalanche energy (EAS) of 408 mJ and operates with a maximum channel temperature of 150°C.
Feature Summary
- High breakdown voltage capability up to 900 V
- Low drain-source ON-resistance for efficient conduction
- Enhanced mode operation with defined gate threshold range
- Robust avalanche energy handling capability
Applications
- Switching regulators
Procurement Notes
Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package marking aligns with the intended lot number indication requirements. Ensure all design parameters remain within the absolute maximum ratings specified in the datasheet to maintain product reliability under operating conditions.
Selection Notes
Select this component for high-voltage switching applications requiring reliable performance at moderate current levels. Evaluate thermal management strategies based on the provided thermal resistance values and safe operating area curves. Consider the gate charge characteristics when designing drive circuits to optimize switching speed and minimize power loss during transitions.
Part Context
This part belongs to the Toshiba π-MOSIV series of silicon N-channel field effect transistors. The series utilizes advanced MOS technology to achieve low ON-resistance and high reliability. The 2SK3564 specifically targets high-voltage switching environments, offering a balance between blocking voltage capability and conduction efficiency suitable for power conversion topologies.
Replacement Considerations
Consult official Toshiba documentation for confirmed substitute part numbers. Verify pinout compatibility, voltage ratings, and thermal characteristics before considering any alternative components.
