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Product Detailed Parameters
- Description：MOSFET N-CH 20V SC-96 SOT-23
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：50mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.3 nC @ 4 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-96-3, Thin Mini Mold
- Package / Case：SC-96
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Overview
The 2SK3576-T1B-AT is an N-channel silicon small-signal MOSFET manufactured by Renesas Electronics Corporation. It is housed in a plastic SC-96 (TMM) three-pin package. The device is designed for high-speed switching applications and supports direct drive from a 2.5 V power source. Key electrical characteristics include a drain-source breakdown voltage of 30 V and a continuous drain current rating of 3.5 A. The component exhibits low on-state resistance, specified at a maximum of 63 mΩ under standard test conditions.
Feature Summary
- Capable of direct drive from a 2.5 V power source for low-voltage logic compatibility
- Features low on-state resistance to minimize conduction losses
- Optimized for high-speed switching performance
Applications
- Power switches for portable machines
- Low-voltage logic interface circuits
- High-speed signal switching applications
Procurement Notes
Verify the specific suffix -T1B-AT against official Renesas documentation to confirm tape-and-reel packaging and exact binning specifications. Ensure the component matches the required thermal and electrical ratings for the target design. Cross-reference with the latest datasheet to confirm compliance with current environmental standards and RoHS directives before finalizing procurement.
Selection Notes
Select this component when a compact N-channel MOSFET is required for low-voltage switching operations. The SC-96 package offers space efficiency for portable designs. Consider the 30 V breakdown voltage and 3.5 A current capacity to ensure adequate headroom for the application's peak loads and operating temperatures.
Part Context
This part belongs to the 2SK3576 series of N-channel MOSFETs originally developed by NEC Electronics Corporation, which merged into Renesas Technology Corporation in 2010. The series is characterized by its ability to operate with low gate drive voltages, making it suitable for modern battery-powered and low-power electronic systems requiring efficient power management.
Replacement Considerations
Official substitute part numbers within the same family include 2SK3577-T2B-AT and 2SK3577(0)-T1B-AT. Verify pinout compatibility and electrical parameter equivalence before substitution.
