2SK3614-Q-TD-E

2SK3614-Q-TD-E

$0.20
  • Description:NCH 4V DRIVE SERIES
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:ab8486a0c12a Category: Brand:

  
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Product Detailed Parameters

  • Description:NCH 4V DRIVE SERIES
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:145mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta), 3.5W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PCP
  • Package / Case:TO-243AA

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2SK3614-Q-TD-E

Overview

The onsemi 2SK3614-Q-TD-E is an N-channel MOSFET from the 4V Drive Series, designed for surface mount applications in a PCP package. It supports a drain-source voltage of 60 V and a continuous drain current of 4 A at ambient temperature (Ta). Thermal dissipation capabilities are rated at 1.5 W at Ta and 3.5 W at case temperature (Tc). This component is intended for OEMs and CMs only.

Feature Summary

  • N-channel configuration optimized for low gate drive voltage requirements
  • Surface mount construction in a PCP package for automated assembly
  • Automotive-grade qualification ensuring reliability in demanding environments

Applications

  • Automotive power switching circuits
  • Load management systems
  • General purpose high-side or low-side switching

Procurement Notes

Verify that the procurement channel is authorized, as this component is restricted to OEMs and CMs with no broker involvement. Confirm the specific suffix -Q-TD-E matches the required automotive grade and tape-and-reel packaging specifications. Ensure compliance with RoHS directives and check for any specific handling instructions related to the PCP package type during storage and assembly.

Selection Notes

Select this device when a 60 V N-channel MOSFET with 4 A current capability is required in a compact surface mount form factor. The 4V drive series characteristic makes it suitable for logic-level or low-voltage gate drive interfaces. Consider the thermal ratings of 1.5 W at ambient and 3.5 W at case for PCB layout and heatsinking strategies. Verify compatibility with automotive environmental standards if used in vehicle electronics.

Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET category. It is part of the 4V Drive Series, which targets applications requiring efficient switching with lower gate drive voltages. The product line emphasizes high performance and reliability for original equipment manufacturers and contract manufacturers in the automotive and industrial sectors.

Replacement Considerations

Consult official onsemi documentation for direct pin-compatible substitutes within the 2SK3614 family or equivalent 60 V N-channel MOSFETs in PCP packages. Verify that any replacement maintains the 4A current rating and 1.5W/3.5W thermal characteristics. Ensure the alternative component also meets automotive qualification standards if the application requires them.

2SK3614-Q-TD-E2SK3614-Q-TD-E
$0.20
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