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Product Detailed Parameters
- Description：6A, 200V, N-CHANNEL MOSFET
- Series：-
- Mfr：NEC Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 20W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK3634-Z-AZ is an N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by NEC Corporation. It is housed in a surface-mount TO-252AB package. The device supports a drain-to-source voltage of 200V and a continuous drain current of 6A at case temperature. Power dissipation ratings are specified as 1W at ambient temperature and 20W at case temperature. It is classified as a small signal field-effect transistor designed for high-voltage applications.
Feature Summary
- N-channel silicon MOSFET construction
- Low on-state resistance characteristics
- Excellent switching performance
- High-voltage design capability
Applications
- High-voltage switching circuits
- Power management systems
- General-purpose electronic switching
Procurement Notes
Verify the manufacturer part number against official NEC Corporation documentation to ensure authenticity. Confirm that the component matches the specified TO-252AB package and electrical ratings. Request the original datasheet from authorized distributors or the manufacturer directly. Validate batch codes and date codes if traceability is required for your specific application standards.
Selection Notes
Select this component when an N-channel MOSFET with 200V breakdown voltage and 6A current capacity is required in a compact surface-mount form factor. Ensure thermal management strategies account for the 1W ambient and 20W case power dissipation limits. Verify that the low on-state resistance meets the efficiency requirements of the target circuit design.
Part Context
This component belongs to the NEC Corporation family of single FETs and MOSFETs. It is categorized under small signal field-effect transistors. The product status is listed as active, indicating ongoing manufacturing support. It serves as a discrete semiconductor solution for voltage control and amplification tasks in electronic assemblies.
Replacement Considerations
Consult official substitution guides for compatible N-channel MOSFETs with matching 200V Vdss and 6A Id ratings in TO-252 packages. Verify pinout compatibility before replacing. No specific substitute part numbers are confirmed in the provided source data.
