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The 2SK3666-3-TB-E is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for low-frequency general-purpose amplifier and impedance converter applications. The device features a single channel configuration housed in a surface-mount 3-CP package, which corresponds to the SC-59 or SOT-23-3 form factor. Key electrical characteristics include a drain-source voltage rating of 15 V and a maximum continuous drain current of 50 mA. The component supports a maximum power dissipation of 200 mW and operates within a junction temperature range up to 150°C.
Verify the specific suffix -3-TB-E against the manufacturer's latest datasheet to confirm pinout orientation and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level prior to integration into the production line.
Select this component when a small-form-factor N-channel JFET is required for low-voltage analog signal paths. Ensure the circuit design accommodates the 15 V drain-source limit and 50 mA current capability. Compare input capacitance and cutoff voltage parameters against alternative SC-59 JFETs for noise performance requirements.
This part belongs to the 2SK3666 family of N-channel JFETs from onsemi. Variants such as the 2SK3666-2-TB-E share similar electrical profiles but may differ in packaging or binning. The product line targets discrete analog applications requiring high input impedance and low distortion.
Publicly listed substitutes include the 2SK3666-2-TB-E from onsemi. Verify pin compatibility and electrical parameter tolerances before substituting. Cross-reference with other SC-59 N-channel JFETs if sourcing constraints exist.