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Product Detailed Parameters
- Description：JFET N-CH 30V 10MA SMCP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2.5 mA @ 10 V
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
- Resistance - RDS(On)：200 Ohms
- Power - Max：200 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMCP
- Grade：-
- Qualification：-
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Overview
The onsemi 2SK3666-4-TB-E is an N-channel junction silicon FET designed for low-frequency general-purpose amplification and impedance conversion. It operates with a drain-to-source voltage of 30 V and a gate-to-drain breakdown voltage of -30 V. The device features a forward transfer admittance (|yfs|) ranging from 3.0 to 6.5 mS at 1 kHz, with a maximum input capacitance (Ciss) of 4 pF. The specific -4-TB-E variant classifies the drain current (IDSS) between 2.5 mA and 6.0 mA under standard test conditions.
Feature Summary
- Optimized for low-frequency general-purpose amplifier applications
- Designed for high-impedance signal conversion tasks
- Engineered for infrared sensor interface circuits
Applications
- Low-frequency general-purpose amplifiers
- Impedance conversion stages
- Infrared sensor signal conditioning
Procurement Notes
Verify the component origin against SANYO Semiconductor Co., Ltd. specifications when sourcing from onsemi channels. Confirm that the ordering suffix matches the required IDSS rank for the -4-TB-E designation. Ensure the package type aligns with the SC-59 or SOT-23 footprint requirements for the intended PCB layout.
Selection Notes
Select this model when circuit design requires an N-channel JFET with a defined IDSS range of 2.5 mA to 6.0 mA. The low input capacitance makes it suitable for high-impedance source buffering. Verify that the 30 V breakdown rating meets the system's maximum operating voltage constraints.
Part Context
This component belongs to the 2SK3666 series of N-channel junction silicon FETs. The series includes variants distinguished by their drain current rankings, specifically the -2, -3, and -4 suffixes. These devices are manufactured using silicon planar technology for stable low-frequency performance.
Replacement Considerations
Direct substitutes within the same family include the 2SK3666-2-TB-E and 2SK3666-3-TB-E. Selection among these depends strictly on the required IDSS range, as the -2 variant handles 0.6–1.5 mA and the -3 variant handles 1.2–3.0 mA.
