2SK3670,F(M

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:1819ae508391 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：670mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK3670,F(M

Overview

The Toshiba Semiconductor and Storage 2SK3670 is a Silicon N-Channel MOS Type (π-MOSV) field effect transistor designed for chopper regulator and DC-DC converter applications. It features a 2.5V gate drive capability, low drain-source ON-resistance of 1.0 Ω typical, and high forward transfer admittance of 2.1 S typical. The device operates with a drain-source voltage rating of 150 V and supports continuous drain current up to 0.67 A. Packaged in a JEDEC TO-92MOD format, it includes thermal resistance characteristics and absolute maximum ratings suitable for general electronics.

Feature Summary

Utilizes π-MOSV technology for enhanced performance in chopper regulators and DC-DC converters
Features low drain-source ON-resistance and high forward transfer admittance for efficient switching
Supports 2.5V gate drive operation for compatibility with low-voltage control circuits

Applications

Chopper regulators
DC-DC converters
General electronics applications including computers and industrial robots

Procurement Notes

Verify the specific ordering suffix and environmental compliance status directly with Toshiba Semiconductor and Storage representatives, as RoHS compatibility details are not explicitly defined in the standard datasheet text. Confirm package markings and lot number identification methods against current manufacturing labels. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook regarding derating concepts and handling precautions under heavy loads.

Selection Notes

Select this component when designing circuits requiring a 150 V N-channel MOSFET with low on-resistance and fast switching speeds. The 2.5V gate drive threshold makes it suitable for logic-level control interfaces. Consider the TO-92MOD package constraints for thermal management and PCB layout. Evaluate the absolute maximum ratings to ensure channel temperature limits are respected during pulse operations.

Part Context

The 2SK3670 belongs to Toshiba's silicon N-channel MOS type transistor lineup, specifically utilizing π-MOSV technology. It is categorized for use in power switching applications such as chopper regulators and DC-DC converters. The device is housed in a TO-92MOD package, distinguishing it from standard through-hole or surface-mount variants found in other series.