2SK3670(F,M)

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:efb081d192e7 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：670mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK3670(F,M)

Overview

The Toshiba Semiconductor and Storage 2SK3670 is a silicon N-channel MOS type (π-MOSV) field effect transistor designed for chopper regulator and DC-DC converter applications. It features a 150 V drain-source voltage rating, a maximum continuous drain current of 0.67 A, and a typical drain-source ON-resistance of 1.0 Ω at VGS = 4 V. The device operates with a 2.5 V gate drive and has a high forward transfer admittance of 2.1 S. Packaged in a JEDEC TO-92MOD format, it supports a channel temperature up to 150 °C.

Feature Summary

Utilizes π-MOSV technology for enhanced performance
Capable of operation with low 2.5 V gate drive voltages
Features low leakage current characteristics
Supports enhancement mode operation

Applications

Chopper regulators
DC-DC converters

Procurement Notes

Verify the specific ordering suffix required for your application, as variations such as (F) or (M) may exist. Confirm RoHS compatibility status directly with Toshiba sales representatives prior to procurement. Ensure that design parameters strictly adhere to the absolute maximum ratings provided in the official datasheet to maintain product reliability.

Selection Notes

Select this component when designing circuits requiring a 150 V breakdown voltage and a 2.5 V logic-compatible gate drive threshold. The TO-92MOD package is suitable for general electronics applications where moderate power dissipation is acceptable. Evaluate thermal resistance requirements carefully, as the device relies on ambient cooling with a specified thermal resistance of 138 °C/W.

Part Context

This part belongs to the Toshiba π-MOSV series of N-channel silicon MOSFETs. These transistors are engineered specifically for switching applications like chopper regulators and DC-DC converters. The family emphasizes low ON-resistance and fast switching capabilities while maintaining compatibility with standard low-voltage logic control signals.