2SK3670(T6CANO,F,M

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:b6a72a251ae0 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：670mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK3670(T6CANO,F,M

Overview

The Toshiba Semiconductor and Storage 2SK3670 is a silicon N-channel MOS type (π-MOSV) field-effect transistor designed for chopper regulator and DC-DC converter applications. It features a 150 V drain-source voltage rating, a typical drain-source ON-resistance of 1.0 Ω at VGS = 4 V, and a high forward transfer admittance of 2.1 S. The device supports 2.5 V gate drive with an enhancement mode threshold voltage ranging from 0.5 to 1.3 V. Packaged in a TO-92MOD format, it offers a maximum DC drain current of 0.67 A and a pulse drain current capability of 3 A.

Feature Summary

Utilizes π-MOSV technology to achieve low drain-source ON-resistance and high forward transfer admittance
Capable of operation with a 2.5 V gate drive signal
Features a built-in body diode with defined reverse recovery characteristics
Designed specifically for chopper regulator and DC-DC converter topologies

Applications

Chopper regulators
DC-DC converters

Procurement Notes

Verify the specific ordering suffixes (T6CANO, F, M) against official Toshiba documentation to confirm exact packaging, tape-and-reel specifications, or environmental compliance status. Confirm RoHS compatibility directly with the manufacturer as indicated in the datasheet notes. Ensure the selected variant matches the required thermal resistance and package dimensions for your design constraints.

Selection Notes

Select this component when designing circuits requiring a 150 V breakdown voltage with a 2.5 V logic-compatible gate drive interface. The low ON-resistance makes it suitable for efficient power switching in compact form factors. Verify that the thermal management strategy accommodates the 138 °C/W channel-to-ambient thermal resistance and the 0.9 W power dissipation limit under continuous operating conditions.

Part Context

This part belongs to Toshiba's N-channel MOSFET portfolio utilizing π-MOSV technology. It is housed in a TO-92MOD package, providing a compact solution for general electronics applications. The device is intended for use in computers, office equipment, measuring equipment, and home appliances, provided it is not used in unintended high-reliability or safety-critical systems.