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Product Detailed Parameters
- Description：MOSFET N-CH 60V 30A TO220F-3SG
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3SG
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3703-1E is a single N-channel Power MOSFET housed in a TO-220F-3SG package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 30 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 26 mΩ at 10 V gate drive and 4 V gate drive. Key switching parameters include a standard turn-on delay time of 16.5 ns and a standard turn-off delay time of 166 ns. The component supports a maximum operating temperature of +150 °C.
Feature Summary
- N-channel MOSFET technology for power switching applications
- Low on-resistance characteristics for efficient conduction
- Fast switching performance with defined delay times
- Robust thermal capability up to +150 °C junction temperature
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the specific suffix '1E' against the manufacturer's official datasheet to confirm pinout and electrical specifications match your design requirements. Confirm RoHS compliance status as indicated in official documentation. Check part status, as this model may be obsolete or subject to lifecycle changes. Ensure the TO-220F-3SG package dimensions fit your PCB layout constraints.
Selection Notes
Select this component when a 60 V N-channel MOSFET with 30 A continuous current capability is required. The low Rds(on) value suggests suitability for high-efficiency power conversion where conduction losses are critical. Consider the thermal resistance of the TO-220F-3SG package for heat dissipation needs. Verify that the gate drive voltage levels align with the specified 4 V and 10 V conditions for optimal performance.
Part Context
This component belongs to the onsemi discrete semiconductor product line, specifically within the FET and MOSFET category. It is classified as a single N-channel MOSFET designed for general-purpose power switching. The TO-220F-3SG package provides a balance of electrical isolation and thermal management for through-hole mounting applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or cross-reference tools for verified alternatives if this obsolete part is no longer sourced.
