SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2SK3704-CB11 is an N-channel silicon MOSFET designed for power switching applications. It features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 45 A. The device exhibits a low on-resistance (Rds On) of 14 mOhms, ensuring efficient conduction with minimal power loss. These electrical characteristics make it suitable for high-current DC-DC converter topologies and motor control circuits where thermal efficiency and robust performance are critical requirements.
Verify the specific suffix CB11 to confirm packaging and reel specifications. Ensure compatibility with the intended PCB footprint and thermal management strategy. Cross-reference the manufacturer datasheet for absolute maximum ratings to prevent overstress during operation.
Select this component when a 60 V rating and 45 A current capacity are required. The low Rds On value is advantageous for minimizing heat generation in space-constrained designs. Evaluate thermal resistance parameters against the system's cooling capabilities before finalizing the design.
This part belongs to the family of single FETs and MOSFETs offered by onsemi. It serves as a discrete power switch solution within broader semiconductor portfolios that include logic devices and protection components. The product line focuses on providing reliable, high-performance semiconductors for industrial and consumer electronics markets.
Check for direct substitutes such as the 2SK3704-1EX or Sanyo equivalents like the 2SK3704-CB11-SY. Verify pinout compatibility and electrical parameter equivalence before substitution.