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Product Detailed Parameters
- Description：MOSFET N-CH 100V 20A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3707 is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features a typical ON-resistance (RDS(on)) of 45mΩ at a 4V drive and a typical input capacitance (Ciss) of 2150pF. The component supports absolute maximum ratings including specific drain-to-source voltage, gate-to-source voltage limits, DC and pulse drain currents, allowable power dissipation, channel temperature thresholds, storage temperature ranges, and single-pulse avalanche energy and current capabilities.
Feature Summary
- N-Channel Silicon MOSFET construction for general-purpose switching applications
- Low ON-resistance optimized for efficient power handling
- High input capacitance supporting standard drive requirements
Applications
- General-purpose electronic switching circuits
Procurement Notes
Verify the manufacturer designation carefully, as the original datasheet attributes this part to SANYO Semiconductors. Confirm that the electrical specifications match your design requirements, particularly the 45mΩ ON-resistance and 2150pF input capacitance values. Ensure the package type and pinout align with your PCB layout before finalizing procurement decisions.
Selection Notes
Select this component when a robust N-Channel MOSFET is required for general switching tasks. Consider the 4V drive compatibility and the specific thermal and avalanche ratings provided in the official documentation. Evaluate the trade-off between the low ON-resistance and the relatively high input capacitance for your specific frequency and efficiency needs.
Part Context
This component is categorized as a discrete semiconductor device, specifically a power or signal MOSFET used in electronic circuits. It serves as a fundamental building block for controlling electrical flow in various systems, distinct from integrated circuits or passive components.
