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Product Detailed Parameters
- Description：MOSFET N-CH 1500V 2A TO3PB
- Series：-
- Mfr：onsemi
- Package：Tray,Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 110W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PB
- Package / Case：TO-3P-3, SC-65-3
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Overview
The onsemi 2SK3746 is a single N-channel power MOSFET designed for high-voltage switching applications. It features a drain-source breakdown voltage of 1500 V and supports a continuous drain current of 2 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 13 ohms at a gate-source voltage of 10 V, with a gate charge of 37.5 nC. It operates within a junction temperature range up to 150°C and utilizes a TO-3PB through-hole package.
Feature Summary
- High voltage capability with 1500 V drain-source breakdown rating
- Ultrahigh-speed switching performance enabled by low input capacitance
- Enhanced reliability achieved through the adoption of HVP process technology
- Robust avalanche resistance guarantee for rugged operation
Applications
- High-frequency resonant converter circuits
- High-voltage DC-to-DC conversion systems
- Industrial motor drive inverters
- Power supply units requiring ultrahigh-speed switching
Procurement Notes
Verify component authenticity carefully as this part is officially obsolete and no longer in active production. Sourcing typically involves surplus distributors or secondary market channels rather than direct manufacturer allocation. Confirm that received units match original specifications and packaging standards to ensure compatibility with existing designs.
Selection Notes
Select this component when designing circuits requiring high voltage isolation combined with fast switching speeds. The TO-3PB package facilitates thermal management via flange mounting. Ensure gate drive voltages remain within the specified ±20 V limit to prevent dielectric breakdown while maintaining optimal conduction characteristics.
Part Context
This device belongs to the 2SK3746 series of N-channel power MOSFETs manufactured by onsemi. It represents a specialized class of silicon-based transistors optimized for high-voltage environments. The series leverages specific manufacturing processes to achieve superior switching efficiency compared to standard general-purpose devices.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status of this component, engineers should evaluate alternative high-voltage MOSFETs from current product lines that offer comparable electrical ratings and package dimensions.
