2SK3747-1E

2SK3747-1E

$5.78
  • Description:MOSFET N-CH 1500V 2A TO3PF-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube

SKU:040707c334fa Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 1500V 2A TO3PF-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1500 V
  • Current - Continuous Drain (Id) @ 25°C:2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
  • Vgs (Max):±35V
  • Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 50W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-3PF-3
  • Package / Case:SC-94

Download product information

2SK3747-1E

Overview

The 2SK3747-1E is an N-channel power MOSFET manufactured by onsemi. It features a drain-to-source voltage rating of 1500V and a continuous drain current capacity of 2A. The device exhibits an on-resistance of 13 ohms. It is housed in a TO-3PF-3L package.

Feature Summary

  • Designed for ultrahigh-speed switching applications with low input capacitance.
  • Ensures high reliability through the adoption of HVP process technology.
  • Features a mica-less package design to improve attachment workability.

Applications

  • High-voltage power conversion circuits
  • Ultrahigh-speed switching systems
  • Industrial power management equipment

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the obsolete status does not conflict with long-term production requirements. Ensure proper handling procedures are followed due to the high voltage ratings associated with this specific semiconductor device.

Selection Notes

Select this component when a 1500V breakdown voltage is mandatory. Consider the 13 ohm on-resistance for thermal management calculations. Evaluate the TO-3PF-3L package constraints against available board space and mounting infrastructure requirements.

Part Context

This part belongs to the N-channel power MOSFET category from onsemi. It utilizes HVP process technology for enhanced performance. The device is designed to operate within a channel temperature range up to 65°C and a storage temperature range of -55 to +150°C.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative components.

2SK3747-1E2SK3747-1E
$5.78
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