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Product Detailed Parameters
- Description：MOSFET N-CH 1500V 2A TO3PML
- Series：-
- Mfr：onsemi
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
- Vgs (Max)：±35V
- Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 50W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PML
- Package / Case：TO-3P-3 Full Pack
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Overview
The onsemi 2SK3747 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It features a drain-source voltage (VDSS) of 1500V and a continuous drain current (ID) of 2A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance (RDS(on)) of 13Ω at VGS=10V. It is constructed using HVP process technology to ensure high reliability and low input capacitance.
Feature Summary
- High-voltage capability with 1500V drain-source breakdown
- Ultrahigh-speed switching performance due to low input capacitance
- High reliability achieved through specialized HVP process technology
- Guaranteed avalanche resistance for robust operation under stress
Applications
- Motor drive circuits
- DC-DC converter topologies
- General power switching applications
- Solenoid drive systems
Procurement Notes
Verify component authenticity and datasheet alignment when sourcing this part. Confirm the specific suffix requirements if applicable to your design constraints. Ensure that thermal management strategies account for the specified power dissipation limits in your target application environment.
Selection Notes
Select this component for designs requiring high voltage isolation and fast switching speeds. Evaluate thermal performance carefully as the on-resistance impacts conduction losses. Consider the package type and mounting requirements for effective heat dissipation during continuous operation cycles.
Part Context
This device belongs to the family of high-voltage N-channel power MOSFETs manufactured by onsemi. It utilizes advanced HVP processing to deliver reliable performance in demanding power electronics environments. The part is engineered to handle significant electrical stresses while maintaining efficient switching characteristics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components based on voltage, current, and package specifications before implementation.
