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Product Detailed Parameters
- Description：MOSFET N-CH 1500V 4A TO3PML
- Series：-
- Mfr：onsemi
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 65W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PML
- Package / Case：TO-3P-3 Full Pack
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Overview
The onsemi 2SK3748 is an N-Channel Power MOSFET housed in a TO-3PF-3L package. It features a Drain-to-Source Voltage (V_DSS) of 1500 V and a continuous Drain Current (I_D) of 4 A at Tc=25°C. The device exhibits a maximum Static Drain-to-Source On-State Resistance (R_DS(on)) of 7 Ω at V_GS=10V and I_D=2A. Key electrical characteristics include a Gate-to-Source Voltage rating of ±20 V, a Total Gate Charge (Q_g) of 80 nC at V_DS=200V, and a single-pulse Avalanche Energy capability of 165 mJ.
Feature Summary
- Low ON-resistance and low input capacitance for ultrahigh-speed switching
- High reliability achieved through the adoption of HVP process
- Good attachment workability provided by a Mica-less package design
- Guaranteed avalanche resistance capability
Applications
- High voltage power switching applications
- Ultrahigh-speed switching circuits
- Power conversion systems requiring high reliability
Procurement Notes
Verify the specific ordering suffix to ensure compliance with packaging requirements. Confirm that the requested variant matches the Pb Free designation and magazine packing quantity specified in the official documentation. Cross-reference the manufacturer part number against current datasheets to validate active status and technical specifications prior to procurement.
Selection Notes
Select this component for applications requiring high voltage isolation up to 1500 V and robust avalanche energy handling. Consider the thermal constraints associated with the TO-3PF-3L package and the specific R_DS(on) values at varying gate voltages. Ensure the driving circuit can supply the necessary gate charge for optimal switching performance within the recommended operating conditions.
Part Context
This device belongs to the N-Channel Power MOSFET category from onsemi. It utilizes a TO-3PF-3L package, also identified as SC-94 by JEITA and JEDEC standards. The product line emphasizes high voltage capabilities and reliability for industrial power electronics, utilizing a Mica-less package structure to enhance mounting workability.
Replacement Considerations
Consult official substitution guides or equivalent product lists from onsemi for verified replacements. Ensure any substitute matches the 1500 V rating, TO-3PF-3L footprint, and avalanche energy specifications.
