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The Sanken Electric USA Inc. 2SK3800VR is a silicon N-channel MOSFET housed in a TO-220S package. It features a drain-source voltage rating of 40V and a continuous drain current capacity of 80A at a case temperature of 25°C. The device exhibits a maximum on-resistance of 0.9mΩ at VGS=10V and ID=35A, with a threshold voltage ranging from 2.0V to 4.0V. Thermal performance includes a junction-to-case thermal resistance of 1.56°C/W and a junction-to-ambient resistance of 62.5°C/W.
Verify the component datasheet directly from Sanken Electric to confirm electrical parameters and physical dimensions. Ensure the TO-220S package matches your PCB footprint requirements. Check that the specific lot meets your thermal management needs given the junction-to-ambient resistance values provided in the official documentation.
Select this component when a 40V N-channel MOSFET with high current capacity is required. Consider the low RDS(ON) for minimizing conduction losses in high-current paths. Evaluate the thermal resistance specifications against your heatsinking strategy to ensure safe operating temperatures under continuous load conditions.
This MOSFET belongs to Sanken's discrete semiconductor lineup designed for general-purpose power switching. The TO-220S package provides a balance between thermal dissipation and mounting flexibility. It serves as a fundamental building block for various power electronics circuits requiring reliable voltage and current control.
Consult official Sanken Electric documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics against the original datasheet.
The maximum drain-source voltage (VDSS) is rated at 40V.
The 2SK3800VR utilizes a TO-220S package.