2SK3813-Z-E1-AZ

2SK3813-Z-E1-AZ

  • Description:TRANSISTOR
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:d87a36666724 Category: Brand:

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Product Detailed Parameters

  • Description:TRANSISTOR
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK3813-Z-E1-AZ

Overview

The 2SK3813-Z-E1-AZ is an N-channel power MOSFET in a TO-252 (MP-3Z) package. It features a drain-source voltage of 40 V and a continuous drain current of 60 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 7.1 mΩ at VGS = 4.5 V and 30 A, or 5.3 mΩ at VGS = 10 V and 30 A. Input capacitance is typically 5500 pF. Total power dissipation reaches 84 W at 25°C case temperature.

Feature Summary

  • Super low on-state resistance for efficient high-current switching
  • Low input capacitance to support fast switching speeds
  • Integrated body diode with defined reverse recovery characteristics

Applications

  • High current switching applications
  • Power management circuits requiring low conduction loss
  • Motor control systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and compliance status. Confirm that the component meets the required quality grade for the intended application environment before procurement.

Selection Notes

Select this component for designs requiring robust performance in high-current environments. Ensure thermal management strategies account for the specified total power dissipation limits and safe operating area constraints under varying pulse widths and duty cycles.

Part Context

This part belongs to the 2SK3813 series of N-channel MOSFETs originally developed by NEC Electronics Corporation. Following the April 2010 merger, Renesas Electronics Corporation assumed responsibility for all business operations and product documentation associated with these components.

Replacement Considerations

The standard 2SK3813 variant utilizes a TO-251 (MP-3) package. Verify pinout compatibility and physical dimensions when substituting between the TO-251 and TO-252 packages.

2SK3813-Z-E1-AZ2SK3813-Z-E1-AZ

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