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The 2SK3813-Z-E1-AZ is an N-channel power MOSFET in a TO-252 (MP-3Z) package. It features a drain-source voltage of 40 V and a continuous drain current of 60 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 7.1 mΩ at VGS = 4.5 V and 30 A, or 5.3 mΩ at VGS = 10 V and 30 A. Input capacitance is typically 5500 pF. Total power dissipation reaches 84 W at 25°C case temperature.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and compliance status. Confirm that the component meets the required quality grade for the intended application environment before procurement.
Select this component for designs requiring robust performance in high-current environments. Ensure thermal management strategies account for the specified total power dissipation limits and safe operating area constraints under varying pulse widths and duty cycles.
This part belongs to the 2SK3813 series of N-channel MOSFETs originally developed by NEC Electronics Corporation. Following the April 2010 merger, Renesas Electronics Corporation assumed responsibility for all business operations and product documentation associated with these components.
The standard 2SK3813 variant utilizes a TO-251 (MP-3) package. Verify pinout compatibility and physical dimensions when substituting between the TO-251 and TO-252 packages.