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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：40A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SK3816-DL-1EX is an N-channel MOSFET designed for surface mount applications in the TO-263-2 package. It features a drain-source voltage rating of 60 V and a continuous drain current of 40 A at 25 °C. The device supports gate drive voltages of 4 V and 10 V to optimize on-resistance performance. Thermal management capabilities include a power dissipation rating of 1.65 W at ambient temperature and 50 W at case temperature, ensuring reliable operation in high-current switching environments.
Feature Summary
- N-channel enhancement mode MOSFET architecture
- Surface mount construction in TO-263-2 package
- Optimized gate drive compatibility at 4 V and 10 V
Applications
- DC-DC converter circuits
- Power switching modules
- Industrial motor drive systems
Procurement Notes
Verify the specific suffix DL-1EX against official onsemi documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets required thermal and electrical ratings for the target application environment before finalizing procurement decisions.
Selection Notes
Select this component when a 60 V N-channel MOSFET with 40 A continuous current capability is required in a TO-263-2 surface mount package. Ensure the design accommodates the specified thermal dissipation limits of 1.65 W (Ta) and 50 W (Tc). Verify gate drive voltage levels align with the 4 V and 10 V optimization points for optimal Rds(on) performance.
Part Context
This part belongs to the onsemi single FET and MOSFET product line. It is categorized under discrete semiconductor transistors intended for power management and switching applications. The component utilizes silicon technology to provide robust reliability for mission-critical power systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official onsemi documentation or authorized distributors for verified cross-reference data.
