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Product Detailed Parameters
- Description：MOSFET N-CH 60V 40A SMP-FD
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 50W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SMP-FD
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The onsemi 2SK3816-DL-E is an N-Channel Power MOSFET housed in a TO-263-2L (SC-83) package. It features a Drain-to-Source Voltage (V_DSS) of 60 V and a continuous Drain Current (I_D) rating of 40 A at Tc=25°C. The device exhibits a maximum static Drain-to-Source On-State Resistance (R_DS(on)) of 40 mΩ at V_GS=4V and 26 mΩ at V_GS=10V, both measured at I_D=20A. Total Gate Charge (Q_g) is specified at 40 nC under conditions of V_DS=30V, V_GS=10V, and I_D=40A. The component supports a single-pulse Drain Current (I_DP) of 160 A with a pulse width up to 10 μs.
Feature Summary
- Optimized for low ON-resistance and fast switching performance
- Capable of 4V gate drive operation for efficient control
- Guaranteed avalanche energy handling capability
Applications
- Motor drive systems
- DC/DC converter circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix DL-1E against official documentation to confirm the TO-263-2L packaging configuration. Ensure that the required thermal management aligns with the allowable power dissipation ratings provided in the datasheet. Confirm compliance requirements such as RoHS status directly from the manufacturer's current product specifications before finalizing procurement plans.
Selection Notes
Select this component when a 60V N-Channel MOSFET with high current capacity is required. The 4V drive capability makes it suitable for logic-level or low-voltage gate driver interfaces. Evaluate the thermal environment carefully, as power dissipation limits are strictly dependent on case temperature. Verify that the application does not exceed the single-pulse avalanche energy limits during transient events.
Part Context
This part belongs to the 2SK3816 series of N-Channel Power MOSFETs manufactured by onsemi. The series includes variants with different packaging options, such as the TO-262-3L configuration. These devices are silicon-based enhancement mode transistors designed for robust performance in power electronics applications requiring reliable switching and conduction characteristics.
Replacement Considerations
The 2SK3816-1E serves as a direct functional substitute within the same series, differing primarily in its TO-262-3L package format rather than electrical performance.
