2SK3820-DL-E

Description：MOSFET N-CH 100V 26A SMP-FD
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:6a883fb819f0 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 26A SMP-FD
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.65W (Ta), 50W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SMP-FD
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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2SK3820-DL-E

Overview

The onsemi 2SK3820-DL-E is an N-Channel Power MOSFET housed in a TO-263-2L package. It features a Drain-to-Source Voltage (VDSS) of 100 V and a continuous Drain Current (ID) of 26 A at Ta=25°C. The device offers low ON-resistance, with RDS(on) typically 45 mΩ at VGS=10V and 56 mΩ at VGS=4V. Input capacitance (Ciss) is typically 2150 pF. It supports ultrahigh-speed switching with turn-on delay time of 20 ns and total gate charge of 44 nC. Maximum allowable power dissipation is 1.65 W at ambient temperature and 50 W at case temperature.

Feature Summary

Low ON-resistance for efficient power switching
Optimized for 4V drive applications
Ultrahigh-speed switching capability
Guaranteed avalanche resistance

Applications

Motor drive systems
DC/DC converters

Procurement Notes

Verify the specific ordering suffix to confirm the exact package variant and shipping configuration. Confirm RoHS compliance status and environmental classification prior to integration. Ensure thermal management aligns with the specified power dissipation limits at both ambient and case temperatures. Validate that the TO-263-2L footprint matches the design layout requirements.

Selection Notes

Select this component for general-purpose switching applications requiring robust performance at 100V. Consider the 4V drive compatibility if interfacing with lower voltage logic controllers. Evaluate the thermal characteristics against the system's heat dissipation capabilities. Verify that the pulse current rating meets any transient load requirements in the circuit design.

Part Context

This part belongs to the 2SK3820 series of N-Channel Silicon MOSFETs manufactured by onsemi. It is designed as a general-purpose switching device suitable for various power electronics applications. The product line emphasizes low ON-resistance and fast switching speeds to enhance overall system efficiency.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Cross-reference electrical parameters such as VDSS, ID, and RDS(on) carefully when evaluating alternatives.