2SK3821-DL-E

2SK3821-DL-E

  • Description:MOSFET N-CH 100V 40A SMP-FD
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:1c3800c6616f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N-CH 100V 40A SMP-FD
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:33mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1.65W (Ta), 65W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SMP-FD
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

2SK3821-DL-E

Overview

The onsemi 2SK3821-DL-E is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a 100V drain-to-source voltage rating and supports a continuous drain current of 40A at 25°C, with a pulsed current capability of 160A. The device offers low on-state resistance, specified as a maximum of 33mΩ at VGS=10V and 42mΩ at VGS=4V. Key electrical characteristics include a gate charge of 73nQ at VGS=10V and a breakdown voltage of 100V. It operates within a channel temperature range up to 150°C and includes avalanche energy ratings of 200mJ.

Feature Summary

  • Low ON-resistance for efficient power handling
  • Capable of 4V drive operation
  • Ultrahigh-speed switching performance
  • Guaranteed avalanche resistance

Applications

  • Motor drive systems
  • DC / DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm availability and lifecycle status directly with authorized distributors or the manufacturer, as component supply can change without notice. Ensure all technical parameters match the design requirements before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring robust N-channel switching with high current capacity. Consider the 4V drive compatibility for logic-level interfacing. Evaluate thermal management needs based on the specified power dissipation limits at ambient and case temperatures. Verify that the 100V rating aligns with the system's maximum operating voltage.

Part Context

This part belongs to the 2SK3821 series of N-channel silicon MOSFETs manufactured by onsemi (formerly SCILLC). It is housed in the SMP package, which corresponds to the TO-262VAR form factor. The device is engineered for general-purpose switching tasks, balancing low conduction losses with fast switching speeds suitable for power conversion circuits.

Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference pinouts, voltage ratings, and package dimensions when considering alternative components.

2SK3821-DL-E2SK3821-DL-E

Click on the inquiry