2SK3823

Description：MOSFET N-CH 60V 40A TO220
Series：-
Mfr：onsemi
Package：Bulk

SKU:82f3cf3f0fda Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 40A TO220
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：27.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.75W (Ta), 45W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

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2SK3823

Overview

The 2SK3823 is an N-Channel Silicon MOSFET manufactured by SANYO Electric Co., Ltd. It features a TO-220 package with three pins. The device supports a drain-to-source voltage of 60 V and a continuous drain current of 40 A at Tc=25°C. Pulse drain current reaches 160 A under specified conditions. Static on-state resistance (RDS(on)) is typically 27.5 mΩ at VGS=10V and 41 mΩ at VGS=4V. Total gate charge is 40 nC. Switching times include turn-on delay of 16.5 ns, rise time of 160 ns, turn-off delay of 160 ns, and fall time of 160 ns.

Feature Summary

Low ON-resistance for efficient power handling
Ultrahigh-speed switching capability
Compatible with 4V drive logic levels
Guaranteed avalanche resistance

Applications

Motor drive systems
DC / DC converters

Procurement Notes

Verify the original manufacturer as SANYO Electric Co., Ltd. when sourcing this component. Confirm that the part number matches the official datasheet specifications exactly. Ensure the package type corresponds to the required mounting style. Check for any specific ordering suffixes if available in official documentation. Validate compliance with relevant safety standards before integration.

Selection Notes

Select this component based on its 60 V rating and 40 A continuous current capacity. Consider the low RDS(on) values for minimizing conduction losses. Evaluate the switching speeds against the required frequency of operation. Ensure the thermal management solution can handle the allowable power dissipation at the expected case temperature.

Part Context

This component belongs to the general-purpose switching device category within the N-Channel Silicon MOSFET family. It is designed for applications requiring reliable performance in power conversion and motor control environments. The device utilizes silicon technology for robust operation.