2SK3827

Description：MOSFET N-CH 100V 40A TO220
Series：-
Mfr：onsemi
Package：Bulk

SKU:69202d110c85 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 40A TO220
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.75W (Ta), 60W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

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2SK3827

Overview

The 2SK3827 is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features low ON-resistance, 4V drive capability, and ultrahigh-speed switching characteristics. The component supports a drain-to-source voltage of 100 V and a continuous DC drain current of 40 A at Tc=25°C. It guarantees avalanche resistance with a single pulse energy rating of 190 mJ. The device utilizes a TO-220 package for through-hole mounting.

Feature Summary

Low ON-resistance for efficient power handling
Capable of 4V gate drive operation
Ultrahigh-speed switching performance
Guaranteed avalanche resistance

Applications

Motor drive systems
DC / DC converters

Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by SANYO Electric Co., Ltd. Confirm that the specific ordering number ENN8244 matches your requirements. Ensure the TO-220 package style aligns with your board layout constraints before finalizing procurement.

Selection Notes

Select this component for applications requiring fast switching speeds and robust avalanche energy handling. The 4V drive feature allows compatibility with logic-level control signals. Verify thermal management capabilities, as allowable power dissipation depends heavily on case temperature conditions during operation.

Part Context

This part belongs to the family of N-Channel Silicon MOSFETs from SANYO Electric Co., Ltd. It is engineered for general-purpose switching tasks where high efficiency and rapid response times are critical. The design emphasizes reliability in power conversion environments.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as V(DSS), I(D), and R(DS(on)).