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Product Detailed Parameters
- Description：MOSFET N-CH 500V 5A TO220SIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba Semiconductor and Storage 2SK3868(Q,M) is a silicon N-channel MOS type field effect transistor utilizing π-MOSVI technology. It features a drain-source voltage rating of 500 V and a continuous DC drain current capacity of 5 A at a case temperature of 25°C. The device exhibits a typical drain-source ON resistance of 1.3 Ω at a gate-source voltage of 10 V and a drain current of 2.5 A. Its forward transfer admittance typically reaches 3 S under identical conditions. The component supports a maximum channel temperature of 150°C and includes avalanche energy ratings of 180 mJ for single pulses.
Feature Summary
- Utilizes π-MOSVI technology to achieve low drain-source ON resistance and high forward transfer admittance.
- Features an enhancement model with a gate threshold voltage range of 2.0 to 4.0 V.
- Includes guaranteed avalanche energy capability for robust operation in switching applications.
Applications
- Switching regulator circuits
- General-purpose electronic equipment
- Industrial robots
Procurement Notes
Verify the specific ordering suffix (Q or M) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package markings and lot number formatting requirements before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a 500 V N-channel MOSFET with moderate current handling capabilities. Ensure thermal management strategies account for the specified thermal resistance values to maintain the channel temperature within the 150°C limit during continuous operation.
Part Context
This part belongs to the Toshiba π-MOSVI series of silicon N-channel MOS type field effect transistors. These devices are engineered for general electronics applications, including computers, office equipment, measuring instruments, and home appliances, while excluding unintended uses like automotive or medical systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
FAQ
What is the maximum repetitive avalanche energy rating?
The repetitive avalanche energy (EAR) rating is 3.5 mJ.
How does the gate threshold voltage vary with temperature?
The datasheet provides a graph showing the relationship between gate threshold voltage and case temperature, indicating that the threshold voltage decreases as the case temperature increases.
