2SK3892

Description：MOSFET N-CH 200V 22A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:0e6233e75b9c Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 22A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：62mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3177 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3892

Overview

The Panasonic 2SK3892 is a silicon N-channel power MOSFET designed for contactless relays, solenoid driving circuits, motor control equipment, and switching power supplies. It features a TO-220D-A1 package with a drain-source voltage rating of 200 V and a continuous drain current capacity of 22 A at 25°C. The device guarantees a gate-source voltage of ±30 V and an avalanche energy capability exceeding 986 mJ under specified conditions (L = 2.67 mH, IL = 22 A, VDD = 50 V). Electrical characteristics include a maximum on-resistance of 62 mΩ at VGS = 10 V and ID = 11.0 A, with a typical turn-off fall time of 39 ns.

Feature Summary

Guaranteed high-speed switching performance with a short fall time.
Robust avalanche energy capacity for handling inductive load transients.
High gate-source voltage tolerance ensuring reliable operation.

Applications

Contactless relay circuits
Solenoid driving circuits
Motor driving circuits
Switching power supplies

Procurement Notes

Verify the current lifecycle status before procurement, as this component may be subject to maintenance or discontinuation phases. Confirm that the specific lot date code meets your storage requirements to prevent degradation. Ensure the supplier provides valid traceability documentation. Cross-reference the exact part number against the latest Panasonic Semiconductor official database to confirm availability and final specifications prior to placing orders.

Selection Notes

Select this component when designing circuits requiring a 200 V N-channel MOSFET with moderate current handling capabilities up to 22 A. The guaranteed avalanche energy rating makes it suitable for applications involving inductive loads where transient energy absorption is critical. Verify that the thermal management design can accommodate the junction-to-case thermal resistance of 3.13 °C/W to maintain safe operating temperatures during continuous operation.

Part Context

This device belongs to the category of silicon N-channel power MOSFETs manufactured by Panasonic Electronic Components. It utilizes a TO-220D-A1 through-hole package configuration, which facilitates mounting onto heat sinks for effective thermal dissipation. The internal connection identifies Pin 1 as Gate, Pin 2 as Drain, and Pin 3 as Source, adhering to standard industry pinout conventions for this package type.

Replacement Considerations

Consult the official Panasonic Semiconductor website for the most current replacement information. Check for updated product standards as specifications are subject to change without notice. Evaluate potential substitutes based on matching voltage ratings, current capacities, and package dimensions to ensure mechanical and electrical compatibility within the existing system design.