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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3899-ZK-E1-AZ is an N-channel power MOSFET in a TO-263 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 84 A at 25°C case temperature. The device exhibits super low on-state resistance, with RDS(on) values of 5.3 mΩ max at VGS = 10 V and 6.5 mΩ max at VGS = 4.5 V, both tested at ID = 42 A. Input capacitance is typically 5500 pF. It includes a built-in gate protection diode for ESD safety.
Feature Summary
- Super low on-state resistance for high efficiency switching
- Built-in gate protection diode for enhanced reliability
- High current handling capability suitable for demanding applications
Applications
- High current switching applications
- Power management systems
- Industrial motor drives
Procurement Notes
Verify the specific suffix -E1-AZ against official Renesas documentation to confirm exact ordering specifications. Confirm quality grade classification before use. Ensure compliance with export control laws if applicable. Check latest datasheet versions for any parameter updates prior to design finalization.
Selection Notes
Select based on required current handling and thermal dissipation needs. Consider the low RDS(on) characteristics for minimizing conduction losses. Evaluate the 60 V rating against system voltage peaks. Ensure adequate heat sinking for the specified power dissipation ratings.
Part Context
This component belongs to the Renesas (formerly NEC Electronics) discrete semiconductor portfolio. It is designed as a robust switching element for power electronics. The TO-263 package facilitates surface mounting with direct thermal coupling to the PCB or heatsink.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions.
