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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5A PW-MOLD2
- Series：U-MOSIII
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PW-MOLD2
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The Toshiba 2SK4017(Q) is an N-channel Power MOSFET belonging to the U-MOS series, utilizing a trench structure for high channel density. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 5 A. The device exhibits a maximum on-resistance of 0.1 Ω and operates with a gate threshold voltage between 1 V and 3 V. Designed for surface-mount applications, it supports a maximum junction temperature of +150 °C.
Feature Summary
- U-MOS trench technology provides low on-resistance and high switching efficiency.
- Voltage-controlled operation ensures low drive power requirements.
- Enhanced ruggedness allows for simplified circuit design margins.
Applications
- Synchronous rectification in DC-DC converters
- Lithium-ion secondary battery protection circuits
- Motor driver power stages
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component for applications requiring low conduction losses at 40 V. The U-MOS structure offers superior performance compared to standard double-diffused MOS types. Consider thermal management solutions suitable for the PW-Mold2 package when designing for high-current loads near the 5 A limit.
Part Context
This device is part of Toshiba's U-MOS product line, which employs trench gate technology to achieve lower on-resistance than conventional structures. The 2SK4017 series is optimized for synchronous rectification and general-purpose switching in compact power supply designs.
Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Do not assume pin-compatible replacements from other manufacturers without verifying electrical characteristics and thermal parameters.
