2SK4043LS

2SK4043LS

$1.40
  • Description:MOSFET N-CH 30V 20A TO220FI
  • Series:-
  • Mfr:onsemi
  • Package:Bag,Bag

SKU:8cd55f03d19e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 20A TO220FI
  • Series:-
  • Mfr:onsemi
  • Package:Bag,Bag
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
  • Rds On (Max) @ Id, Vgs:21mOhm @ 10A, 4V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:37 nC @ 4 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 20W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220FI(LS)
  • Package / Case:TO-220-3 Full Pack

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2SK4043LS

Overview

The onsemi 2SK4043LS is an N-channel silicon MOSFET designed as a general-purpose switching device. It features a drain-to-source voltage of 30 V and supports a continuous DC drain current of 20 A, with a pulsed current capability of 80 A. The component exhibits low ON-resistance, rated at a maximum of 21 mΩ at VGS=4V and 24 mΩ at VGS=2.5V. It operates with a gate-to-source voltage range of ±10 V and includes avalanche resistance guarantees, supporting single-pulse energies up to 147 mJ.

Feature Summary

  • Low ON-resistance for efficient power handling
  • Capable of operation with 2.5V drive signals
  • Guaranteed avalanche resistance for robust performance

Applications

    Procurement Notes

    Verify the specific ordering number EN8642 against official manufacturer documentation to ensure correct part identification. Confirm that the TO-220FI(LS) package dimensions align with your board layout requirements. Review the absolute maximum ratings carefully to ensure thermal management meets the specified case temperature limits during operation.

    Selection Notes

    Select this component when a 30 V N-channel MOSFET with high current capacity is required. The guaranteed avalanche energy rating makes it suitable for inductive load applications where transient events occur. Ensure the driving circuit can provide sufficient gate charge to achieve the specified switching times.

    Part Context

    This device belongs to the general-purpose switching MOSFET category from onsemi. It utilizes silicon technology and is housed in a TO-220FI(LS) package. The marking on the device body is K4043. It is intended for use in circuits requiring reliable switching performance within its specified electrical limits.

    Replacement Considerations

    Public confirmed substitute part numbers are not available in the provided datasheet.

    FAQ

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