2SK4043LS

$1.40

Description：N-CHANNEL MOSFET
Series：-
Mfr：Sanyo
Package：Bulk

SKU:8cd55f03d19e Category: Single FETs, MOSFETs Brand: Sanyo

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL MOSFET
Series：-
Mfr：Sanyo
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 4V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 4 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：3 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 20W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FI(LS)
Package / Case：TO-220-3 Full Pack

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2SK4043LS

Overview

The 2SK4043LS is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features a Drain-to-Source Voltage (V_DSS) of 30 V and supports a continuous DC Drain Current (I_D) of 20 A at Tc=25°C, with a pulsed current rating of 80 A. The static Drain-to-Source On-State Resistance (R_DS(on)) is rated at a maximum of 21 mΩ at V_GS=4V and 24 mΩ at V_GS=2.5V. Key electrical parameters include a Gate Threshold Voltage (V_GS(off)) range of 0.4 V to 1.3 V, a Total Gate Charge (Q_g) of 37 nC, and an Avalanche Energy (E_AS) capability of 147 mJ.

Feature Summary

Low ON-resistance for efficient power handling
Capable of operation with a 2.5V drive voltage
Guaranteed avalanche resistance

Applications

General-Purpose Switching Device

Procurement Notes

Verify the manufacturer designation on the datasheet header, which indicates SCILLC (ON Semiconductor), rather than Sanyo. Confirm the specific package variant matches your thermal requirements, as the document references TO-220FI(LS). Ensure that the absolute maximum ratings, particularly regarding case temperature and pulse width limitations, align with your circuit design constraints before finalizing procurement.

Selection Notes

Select this component when a low-voltage (30V) high-current (20A) solution is required. The guaranteed avalanche energy rating makes it suitable for inductive load applications where transient overvoltages may occur. Consider the 2.5V drive capability if interfacing directly with logic-level controllers without additional gate driver stages.

Part Context

This part is an N-Channel Silicon MOSFET manufactured by SCILLC (ON Semiconductor). It serves as a general-purpose switching device within the semiconductor discrete component category. The datasheet provides comprehensive electrical characteristics, including breakdown voltages, on-state resistance, and switching times, alongside mechanical package dimensions for integration into electronic circuits.