Jfets 2SK932-23-TB-E product image

2SK932-23-TB-E

$0.54
  • Description:JFET N-CH 50MA SMCP
  • Series:-

SKU:8597f81c7be1 Category: Brand:

  
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2SK932-23-TB-E is listed in the Jfets range at ChipApex. The manufacturer field lists onsemi. Its product description is JFET N-CH 50MA SMCP. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2SK932-23-TB-E

  • Description:JFET N-CH 50MA SMCP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):15 V
  • Current - Drain (Idss) @ Vds (Vgs=0):10 mA @ 5 V
  • Current Drain (Id) - Max:50 mA
  • Voltage - Cutoff (VGS off) @ Id:200 mV @ 100 µA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:200 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMCP
  • Grade:-
  • Qualification:-

Jfets datasheet and documents for 2SK932-23-TB-E

2SK932-23-TB-E

Jfets Overview

The onsemi 2SK932-23-TB-E is an N-channel Junction Field-Effect Transistor (JFET) designed for low-noise applications. It operates with a maximum drain-to-source voltage of 15 V and supports a continuous drain current up to 50 mA, dissipating a maximum power of 200 mW at 25°C ambient temperature. The device features a forward transfer admittance (|yfs|) ranging from 25 to 50 mS at 1 kHz. For the '23' rank variant, the zero-gate voltage drain current (IDSS) is specified between 10.0 mA and 17.0 mA when VDS is -5 V. It utilizes the FBET process to achieve ultralow noise figures, typically 1.5 dB at 1 kHz, and maintains a small input capacitance of approximately 10 pF.

Jfets Feature Summary

  • Adopts FBET process technology for optimized performance
  • Provides large forward transfer admittance for effective signal amplification
  • Features small input capacitance to minimize loading effects
  • Delivers ultralow noise figure suitable for sensitive RF circuits
  • Housed in an ultrasmall SC-59/CP3 package to reduce footprint

Jfets Applications

  • AM tuner RF amplification stages
  • Low noise amplifier (LNA) front ends

Jfets Procurement Notes

Verify the specific IDSS rank suffix required for the design; the '-23-' designation indicates a 10.0 to 17.0 mA range, whereas other ranks exist. Confirm the tape and reel packaging quantity matches production needs, as standard reels contain 3,000 units. Ensure the component meets RoHS compliance requirements for the target assembly environment.

Jfets Selection Notes

Select this component when ultralow noise performance is critical for AM radio frequency signals. Compare the |yfs| and Ciss parameters against circuit impedance requirements. Verify that the 15 V breakdown voltage accommodates the maximum supply rails. Consider the thermal derating curves if operating above 25°C ambient conditions.

Jfets Part Context

This part belongs to the 2SK932 family of N-channel JFETs manufactured by onsemi. The family includes variants with different IDSS rankings, such as the 2SK932-24-TB-E which covers a higher current range of 14.5 to 24.0 mA. All variants share the same electrical characteristics regarding voltage ratings, noise figures, and package dimensions.

Jfets Replacement Considerations

The 2SK932-24-TB-E is a direct functional substitute within the same family, differing only in the IDSS current ranking. Designers must verify that the replacement's current range aligns with the biasing network of the existing circuit to maintain intended gain and noise performance.

2SK932-23-TB-E2SK932-23-TB-E
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