2STA1943

Single Bipolar Transistors Overview

The 2STA1943 is a high-power PNP epitaxial planar bipolar transistor manufactured using BiT-LA technology. It features a collector-emitter voltage of -230 V, a continuous collector current of -15 A, and a total power dissipation of 150 W at 25°C case temperature. The device exhibits a typical transition frequency (fT) of 30 MHz and a DC current gain ranging from 35 to 160. It is housed in a TO-264 package with a thermal resistance junction-to-case of 0.83 °C/W.

Single Bipolar Transistors Feature Summary

• Complementary to the 2STC5200 NPN transistor for push-pull configurations
• High breakdown voltage exceeding -230 V for robust operation
• Fast-switching speed suitable for linear amplifier applications

Single Bipolar Transistors Applications

• Audio power amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision against the manufacturer's official records before procurement. Confirm that the TO-264 packaging matches the mechanical dimensions provided in the documentation. Ensure compliance with environmental standards such as ECOPACK lead-free specifications if required by the design constraints.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is required to complement an NPN device like the 2STC5200. Consider the 150 W power dissipation capability and the -230 V rating for high-power audio or switching circuits. Evaluate the thermal management requirements based on the 0.83 °C/W junction-to-case resistance.

Single Bipolar Transistors Part Context

This part belongs to STMicroelectronics' high-power bipolar transistor portfolio. It utilizes BiT-LA technology designed specifically for linear amplifier performance, offering good gain linearity. The device is intended for general-purpose high-power applications where complementary pairing with NPN transistors is necessary.

Single Bipolar Transistors Replacement Considerations

The 2STC5200 is documented as the complementary NPN counterpart. Verify pinout compatibility and electrical symmetry if substituting within a push-pull stage. No other direct substitutes are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The absolute maximum collector-emitter voltage (VCEO) is -230 V.

Is this transistor suitable for RF applications?

The datasheet specifies it for audio power amplifiers with a typical fT of 30 MHz, not explicitly for RF.

What is the recommended operating junction temperature?

The maximum operating junction temperature is 150 °C.