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2STR2215 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS PNP 15V 1.5A SOT-23-3. Review the specifications below when checking this part for your BOM.
The 2STR2215 is a low voltage fast-switching PNP power transistor manufactured using PB-HCD technology. It features very low collector-emitter saturation voltage and high current gain. Key electrical ratings include a collector-base voltage of -15 V, collector-emitter voltage of -15 V, and emitter-base voltage of -5 V. The maximum collector current is -1.5 A with a peak current of -3 A. Total dissipation is 0.5 W at 25 °C. DC current gain ranges from 80 to 560 depending on the collector current. Switching times are 60 ns turn-on and 220 ns turn-off under resistive load conditions.
Verify component status before procurement as the datasheet explicitly identifies this part as obsolete. Confirm availability through authorized distributors or secondary market channels. Ensure that any replacement components maintain compatibility with the original circuit design requirements. Review STMicroelectronics terms regarding obsolete products carefully.
Select this component for applications requiring low voltage operation and fast switching characteristics. The device is suitable for surface mount designs due to its SOT-23 packaging. Consider the complementary NPN transistor 2STR1215 if a matched pair is required. Evaluate thermal resistance parameters for PCB layout optimization to ensure reliable operation within specified temperature limits.
This component belongs to the family of low voltage fast-switching PNP-NPN power transistors below 500 V offered by STMicroelectronics. It utilizes PB-HCD technology to achieve high current density and performance. The complementary NPN version is the 2STR1215. These devices are designed for efficient power switching in compact electronic systems.
Public confirmed substitute part numbers are not available in the provided documentation. As the product is marked obsolete, alternative sourcing must be verified independently. Ensure any potential replacements match the electrical ratings and package dimensions of the original specification.
The complementary NPN transistor is the 2STR1215.
It is manufactured using PB-HCD (power bipolar high current density) technology.
The maximum operating junction temperature is 150 °C.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.