2STW1693

Single Bipolar Transistors Overview

The 2STW1693 is a high-power PNP epitaxial planar bipolar transistor manufactured using low voltage planar technology with a base island layout. It provides a collector-emitter breakdown voltage (VCEO) of -80 V and a continuous collector current (IC) of -6 A, with a peak current capability of -12 A. The device achieves a total dissipation of 60 W at 25 °C case temperature and features a typical transition frequency (fT) of 20 MHz. Designed for complementary operation with the 2STW4466 NPN transistor, it offers good gain linearity and low saturation voltage characteristics.

Single Bipolar Transistors Feature Summary

• Complementary to the 2STW4466 NPN transistor
• Good gain linearity coupled with low collector-emitter saturation voltage
• Fully characterized at an operating junction temperature of 125 °C

Single Bipolar Transistors Applications

• Audio power amplifier output stage
• High fidelity audio frequency amplifiers rated between 40W and 70W

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm package integrity upon receipt, as the unit utilizes a TO-247 tube packaging format. Ensure storage conditions remain within the specified range of -65 to 150 °C to maintain electrical reliability. Review the latest datasheet revision history for any updates regarding mechanical dimensions or thermal resistance parameters before finalizing integration.

Single Bipolar Transistors Selection Notes

Select this component when designing high-fidelity audio amplifiers requiring a robust PNP output stage. Its complementary nature with the 2STW4466 simplifies push-pull circuit design. Consider its 60 W power dissipation and -80 V voltage rating against specific load requirements. Evaluate the 20 MHz transition frequency to ensure suitability for the target audio bandwidth. Verify that the TO-247 package aligns with available thermal management solutions on the printed circuit board.

Single Bipolar Transistors Part Context

This device belongs to the family of high-power PNP epitaxial planar bipolar transistors produced by STMicroelectronics. It is engineered specifically for demanding audio applications where linearity and switching performance are critical. The use of base island layout technology contributes to its superior gain characteristics compared to standard planar designs.

Single Bipolar Transistors Replacement Considerations

The 2STW4466 serves as the designated complementary NPN counterpart for balanced bridge configurations. No direct single-part replacements are documented in the provided datasheet; verify equivalent specifications from other manufacturers if sourcing alternatives.