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3LN01C-TB-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 150MA 3CP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for 3LN01C-TB-H
- Description：MOSFET N-CH 30V 150MA 3CP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：3.7Ohm @ 80mA, 4V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：1.58 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：7 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3/CP3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for 3LN01C-TB-H
Single FETs, MOSFETs Overview
The 3LN01C-TB-H is an N-channel small signal MOSFET from onsemi, housed in a CP (SC-59/TO-236/SOT-23) package. It features a drain-to-source voltage of 30V and a continuous drain current of 0.15A. The device offers low ON-resistance, with typical values of 3.7Ω at VGS=4V and 5.2Ω at VGS=2.5V. Designed for ultrahigh-speed switching, it includes a total gate charge of 1.58nC and supports a 2.5V drive level.
Single FETs, MOSFETs Feature Summary
- Ultrahigh-speed switching capability
- Low ON-resistance for efficient conduction
- Compatible with 2.5V drive levels
Single FETs, MOSFETs Applications
- Battery protection circuits
- Power management applications
- General-purpose switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm packaging details. The TB suffix indicates a reel quantity of 3,000 pieces per reel. Ensure the procurement order specifies Pb-Free and Halogen Free compliance if required by the manufacturing process. Cross-reference the marking code 'TB' with the shipping memo to validate authenticity upon receipt.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET is required for low-voltage, low-current applications. The 30V rating and 0.15A current capacity suit portable electronics. Consider the 2.5V drive compatibility for systems utilizing lower logic voltages. The SOT-23 form factor allows for space-constrained PCB layouts.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's portfolio of small signal MOSFETs designed for general-purpose switching. The CP package provides a standard footprint compatible with SC-59, TO-236, and SOT-23 land patterns. It serves as a discrete solution for power control tasks where size and switching speed are prioritized over high current handling.
Single FETs, MOSFETs Replacement Considerations
The datasheet lists the 3LN01C-TB-E as a related variant within the same electrical specification family. Verify that any substitute maintains the identical pinout and package dimensions to ensure mechanical compatibility without redesigning the PCB layout.
Single FETs, MOSFETs FAQ
What is the maximum allowable power dissipation?
The absolute maximum rating for allowable power dissipation is 0.25W at an ambient temperature of 25°C.
How does the ON-resistance vary with gate voltage?
The static drain-to-source ON-resistance increases as the gate-to-source voltage decreases. Typical values are 3.7Ω at 4V, 5.2Ω at 2.5V, and 12.8Ω at 1.5V.
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