3N206

RF FETs, MOSFETs Overview

The Harris Corporation 3N206 is an N-channel dual-gate silicon MOSFET designed for radio frequency applications. It features a TO-72 (TO-206AF) through-hole package and operates as a depletion-mode device. Key electrical parameters include a breakdown voltage of 25 V, a forward transadmittance range of 4 to 17 mS, and a maximum drain current of 0.03 A. The component is specified for use in intermediate frequency (I.F.) amplifier circuits.

RF FETs, MOSFETs Feature Summary

• Dual-gate N-channel architecture optimized for RF signal processing
• Depletion-mode operation suitable for linear amplification
• Silicon construction with insulated-gate field-effect technology

RF FETs, MOSFETs Applications

• Intermediate frequency (I.F.) amplifier stages
• Radio frequency circuit design
• RF FET applications requiring dual-gate control

RF FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as the 3N206 was originally produced by Harris Corporation but may also be sourced from other suppliers such as GE Solid State or generic manufacturers. Confirm RoHS compliance status, as some listings indicate non-compliance. Ensure the specific package variant matches your board requirements, typically TO-72 or TO-206AF. Request detailed datasheets to validate electrical characteristics against original Harris specifications before finalizing procurement.

RF FETs, MOSFETs Selection Notes

Select this component when a dual-gate N-channel MOSFET is required for RF or IF amplification tasks. The depletion-mode characteristic allows for specific biasing configurations distinct from enhancement-mode devices. Consider the TO-72 package constraints for through-hole assembly. Verify that the 25 V breakdown voltage and low current limits meet the circuit's power handling needs. Compare performance metrics like transadmittance with modern equivalents if space or efficiency is a primary concern.

RF FETs, MOSFETs Part Context

The 3N206 belongs to the family of silicon dual-insulated-gate field-effect transistors. Historically associated with Harris Corporation and later GE Solid State, these components were widely used in analog radio communication equipment. The dual-gate structure provides improved isolation and gain control compared to single-gate designs, making it a specialized choice for vintage or legacy RF system maintenance.

RF FETs, MOSFETs Replacement Considerations

Publicly confirmed direct substitute part numbers are not available in the provided documentation. Modern replacements may require redesigning the bias network due to differences in threshold voltages and packaging technologies between legacy depletion-mode MOSFETs and contemporary enhancement-mode alternatives.