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The onsemi 4N29M is a single-channel transistor output optocoupler featuring an aluminum gallium arsenide infrared LED coupled to a silicon epitaxial planar photodarlington. It provides high isolation with a rated insulation voltage of 7500 Vrms. The device supports a maximum forward current of 80 mA and a collector current of 150 mA, with a maximum collector-emitter voltage of 30 V. Operating within a temperature range of -40°C to +100°C, it is housed in a PDIP-6 package.
Verify the specific suffix (TM vs M) against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Confirm current availability status as distribution channels may list obsolete or limited stock items. Ensure the procurement source provides valid traceability documentation for through-hole components.
Select this component when high gain from a photodarlington output is required for driving relays or logic inputs. Compare the 7500 Vrms isolation rating against system safety requirements. Verify that the 30 V collector voltage and 150 mA current limits accommodate the load requirements without exceeding the 250 mW power dissipation limit.
This part belongs to the 4N29 series of transistor output optocouplers manufactured by onsemi. It shares functional similarities with other devices in the family but is distinguished by its specific isolation voltage and photodarlington configuration. The component is widely recognized for use in industrial control systems requiring reliable galvanic isolation.
The 4N29TM is listed as a variant with potential differences in packaging or testing standards. Cross-reference the 4N32VM for similar functionality, noting its lower 4170 Vrms isolation rating. Verify pinout compatibility before substituting with other DIP-6 photodarlington optocouplers.